Photoluminescence spectra and line-shape synthesis of a conduction-band-to-deep-acceptor transition in GaAs:Sn.
| Autor: | Zemon, S., Vassell, M. O., Lambert, G., Bartram, R. H. |
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| Zdroj: | Journal of Applied Physics; 12/15/1986, Vol. 60 Issue 12, p4253, 6p, 1 Chart, 8 Graphs |
| Abstrakt: | Presents a systematic photoluminescence study of a deep level in liquid-phase-epitaxy-grown GaAs:Sn. Experimental results; Data analysis; Discussion and conclusion. |
| Databáze: | Complementary Index |
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