Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs.

Autor: Wang, P. D., Foad, M. A., Sotomayor-Torres, C. M., Thoms, S., Watt, M., Cheung, R., Wilkinson, C. D. W., Beaumont, S. P.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1992, Vol. 71 Issue 8, p3754, 6p, 7 Graphs
Abstrakt: Reports on Raman investigations of the coupled longitudinal optical phonon-plasmon scattering on heavily doped n[sup+]-GaAs. Background to the study; Theoretical considerations; Details of the dry etching and experimental technique; Results and discussion.
Databáze: Complementary Index