| Autor: |
Yu, P. W., Yen, M. Y., Stutz, C. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1994, Vol. 75 Issue 5, p2628, 5p |
| Abstrakt: |
Reports the photoluminescence (PL) properties of magnesium (Mg)-ion implanted layers of low temperature (LT) grown molecular beam epitaxial gallium arsenide. Examples of LT grown materials; Excitation intensity dependence of PL features for a sample implanted; Relationship between the Mg incorporation threshold dose and the inverse of growth temperature. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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