The effect of the flow of silane on the properties of a-Si:H deposited by concentric-electrode radio frequency glow-discharge.

Autor: Conde, J. P., Chan, K. K., Blum, J. M., Arienzo, M.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1992, Vol. 71 Issue 8, p3990, 7p, 8 Graphs
Abstrakt: Deals with a study which described a novel concept for preparing highly photosensitive hydrogenated amorphous silicon-based semiconductors. Experimental procedures; Results; Discussion; Conclusion.
Databáze: Complementary Index