Surface modification of CaF2 on Si(111) by low-energy electron beam for over growth of GaAs films.
| Autor: | Izumi, Akira, Tsutsui, Kazuo, Furukawa, Seijiro |
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| Zdroj: | Journal of Applied Physics; 3/1/1994, Vol. 75 Issue 5, p2307, 5p |
| Abstrakt: | Studies the surface modification of calcium compound on silicon substrates by low-energy electron beam for overgrowth of gallium arsenide thin films. Applications of electron beam exposure and epitaxy method; Details on the experimental procedure; Discussion on the results of the study. |
| Databáze: | Complementary Index |
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