Optical investigations of ion implant damage in silicon.

Autor:	Hummel, R. E., Xi, Wei, Holloway, P. H., Jones, K. A.
Předmět:	ION implantation SILICON
Zdroj:	Journal of Applied Physics; 4/15/1988, Vol. 63 Issue 8, p2591, 4p
Abstrakt:	Deals with a study of ion implantation damage in silicon utilizing an optical technique. Experimental procedure; Results and discussion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu