Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular-beam epitaxy.

Autor:	Ferrari, C., Franzosi, P., Gastaldi, L., Taiariol, F.
Předmět:	HETEROSTRUCTURES MOLECULAR beams
Zdroj:	Journal of Applied Physics; 4/15/1988, Vol. 63 Issue 8, p2628, 5p, 6 Graphs
Abstrakt:	Deals with a study which assessed the crystal quality of InGaAs/InP single heterostructures grown by molecular-beam epitaxy using x-ray double-crystal diffractometry. Experimental details; Results and discussion; Conclusion.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu