The formation of an amorphous silicide by thermal reaction of sputter-deposited Ti and Si layers.

Autor: Raaijmakers, Ivo J. M. M., Reader, Alec H., Oosting, Piet H.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1988, Vol. 63 Issue 8, p2790, 6p, 2 Black and White Photographs, 1 Chart, 4 Graphs
Abstrakt: Investigates the initial reaction in amorphous Si-Ti-amorphous Si trilayers using Auger electron spectroscopy, transmission electron microscopy and x-ray diffraction. Examination of the growth of an amorphous Ti-Si-phase in thick layers; Growth kinetics and composition of the amorphous silicide.
Databáze: Complementary Index