Bias-voltage- and bias-light-dependent high photocurrent gains in amorphous silicon Schottky barriers.
| Autor: | Rubinelli, F. A., Hou, J. Y., Fonash, S. J. |
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| Zdroj: | Journal of Applied Physics; 3/1/1993, Vol. 73 Issue 5, p2548, 7p, 8 Graphs |
| Abstrakt: | Presents a study which demonstrated that large, long-wavelength photocurrent gains are attainable in forward-biased Schottky barrier structures fabricated using hydrogenated amorphous silicon (a-Si:H). Methodology; Results of the study; Conclusions. |
| Databáze: | Complementary Index |
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