| Autor: |
Clarisse, C., Riou, M.-T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1991, Vol. 69 Issue 5, p3324, 4p, 1 Diagram, 2 Charts, 3 Graphs |
| Abstrakt: |
Presents a study which examined the influence of the metallic ion in mono- and diphthalocyanines on field effect transistor performance characteristics. Relationship between device performance and fabrication techniques; Characteristics of the arsenic-fabricated devices; Details on the annealing of the metallic devices. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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