| Autor: |
Solomon, G. S., Timmons, M. L., Posthill, J. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1989, Vol. 65 Issue 5, p1952, 5p, 1 Black and White Photograph, 3 Diagrams, 3 Graphs |
| Abstrakt: |
Investigates the organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs[sub2] on gallium arsenide. Analysis of stoichiometric chemical composition; Indication of selected-area electron diffraction patterns; Absorptance and transmittance measurements. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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