| Autor: |
Hicks, M. C., Wronski, C. R., Grot, S. A., Gildenblat, G. Sh., Badzian, A. R., Badzian, T., Messier, R. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 3/1/1989, Vol. 65 Issue 5, p2139, 3p, 1 Black and White Photograph, 2 Graphs |
| Abstrakt: |
Presents a study that measured the barrier height of Schottky diodes for aluminum and gold rectifying contacts to p-type chemical-vapor-deposited diamond thin films using the internal photoemission technique. Significance of the electrical properties of semiconductor diamond; Deposition of the diamond films on single-crystal silicon as well as on fused silica substrates for film characterization; Confirmation of the diamond structure of the films. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
