| Autor: |
Mei, P., Schwarz, S. A., Venkatesan, T., Schwartz, C. L., Colas, E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1989, Vol. 65 Issue 5, p2165, 3p, 3 Graphs |
| Abstrakt: |
Studies the enhanced layer interdiffusion in tellurium (Te)-doped aluminum arsenide/gallium arsenide superlattices by secondary ion mass spectrometry. Reason for the interest in the study of impurity-induced superlattice mixing; Measurement of the aluminum diffusion length at both high and low Te concentrations; Relation of the mixing induced by dopants to their local concentration. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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