| Autor: |
Fay, P., Brockenbrough, R. T., Abeln, G., Scott, P., Agarwala, S., Adesida, I., Lyding, J. W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1994, Vol. 75 Issue 11, p7545, 5p, 4 Black and White Photographs, 3 Graphs |
| Abstrakt: |
Presents a study that reported the chemical modification of n- and p-type hydrogen-passivated silicon surfaces by a scanning tunneling microscope. Pattern transfer for the defined regions; Scanning tunneling microscope (STM) image of a pattern written on a p-type silicon substrate; Evidence which suggests that the STM patterning is at least partially a topographic change. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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