Study of Co silicide formation by multiple implantation.
| Autor: | Witzmann, A., Schippel, S., Zentgraf, A., Gajduk, P. I. |
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| Zdroj: | Journal of Applied Physics; 6/1/1993, Vol. 73 Issue 11, p7250, 11p, 1 Chart, 12 Graphs |
| Abstrakt: | Presents a study which examined the annealing behavior of silicon implanted with cobalt. Details on the experiment; Influence of cobalt concentration and implantation defects on cobalt redistribution; Information on cobalt double implantation. |
| Databáze: | Complementary Index |
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