Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs.

Autor: Colomb, C. M., Stockman, S. A., Gardner, N. F., Curtis, A. P., Stillman, G. E., Low, T. S., Mars, D. E., Davito, D. B.
Předmět:
Zdroj: Journal of Applied Physics; 6/1/1993, Vol. 73 Issue 11, p7471, 7p, 1 Diagram, 1 Chart, 4 Graphs
Abstrakt: Presents a study which examined minority-carrier electron-diffusion coefficients and lifetimes in carbon-doped gallium arsenide. Details on the experiment; Design of the device; Results of the study.
Databáze: Complementary Index