| Autor: |
Itsumi, Manabu, Shiono, Noboru, Shimaya, Masakazu |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1993, Vol. 73 Issue 11, p7515, 5p, 2 Diagrams, 1 Chart |
| Abstrakt: |
Presents a study which described the influence of poly-silicon gate formation conditions on the electrical properties and reliability of very thin thermal silicon dioxide films. Long-term bias temperature aging test results in terms of hole trapping and electron trapping in thin oxides; Dielectric properties of the thin oxides; Experimental details; Results and discussion; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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