Formation of p+-p-n junctions in gallium arsenide by a two-step diffusion process.

Autor:	Heath, L. S., Bisberg, J. E., Chin, A. K., Meehan, K.
Předmět:	DIFFUSION SEMICONDUCTOR junctions GALLIUM arsenide ANNEALING of metals ZINC
Zdroj:	Journal of Applied Physics; 6/1/1991, Vol. 69 Issue 11, p7898, 3p, 4 Graphs
Abstrakt:	Deals with the development of an open-tube diffusion process to form p[sup+]-p-n junctions in gallium arsenide (GaAs). Calculation of diffusion coefficients for the annealing process; Activation energies for zinc diffusion; Advantages of the annealing process.
Databáze:	Complementary Index
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