| Autor: |
Zemon, S., Lee, J., Lambert, G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1989, Vol. 65 Issue 11, p4382, 6p |
| Abstrakt: |
Presents information on a study which discussed photoluminescence (PL) and PL excitation (PLE) spectroscopy in an applied magnetic field for gallium arsenide (GaAs) grown directly on a silicon substrate by organometallic vapor-phase epitaxy. Interband transitions; Analysis of PLE features not identified as interband transitions; Ways the GaAs layers differ from those of homoepitaxial GaAs. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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