Comparative study of Fermi energy pinning and adatom bond character: Antimony versus the column 3 elements (Al, Ga, In) on GaAs (110) and GaSb (110).

Autor: Skeath, Perry, Su, C. Y., Lindau, I., Spicer, W. E.
Předmět:
Zdroj: Journal of Applied Physics; 6/1/1985, Vol. 57 Issue 11, p5089, 4p, 3 Graphs
Abstrakt: Presents a study which examined the nature of a defect mechanism responsible for pinning the Fermi energy within the band gap on the (110) surfaces of a 3-5 semiconductor surface. Comparison of the semiconductor surface Fermi energy pinning for different 3-5 semiconductors; Method; Results and discussion.
Databáze: Complementary Index