Switch simulations of a double-barrier resonant-tunnel diode based circuit.

Autor: Joosten, H. P., Noteborn, H. J. M. F., Kaski, K.
Předmět:
Zdroj: Journal of Applied Physics; 7/1/1993, Vol. 74 Issue 1, p712, 6p, 1 Diagram, 5 Graphs
Abstrakt: Reports on the switch simulations of a double-barrier resonant-tunnel diode based circuit. Model for the device dynamics and numerical simulations of the switching process; Dynamics of double-barrier resonant-tunneling devices; Analytical expressions for the time constants.
Databáze: Complementary Index