| Autor: |
Mobarhan, K., Jelen, C., Kolev, E., Razeghi, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1993, Vol. 74 Issue 1, p743, 3p, 4 Graphs |
| Abstrakt: |
Reports on the growth of a GaInAsP/indium phosphide double heterostructure laser on a silicon substrate using low-pressure metalorganic chemical vapor deposition. Advantages offered by silicon; Room-temperature operation of GaInAsP double heterostructure; Cavity length dependence of the inverse external differential quantum efficiency. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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