| Autor: |
Samaras, J. E., Darling, Robert B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1992, Vol. 72 Issue 1, p168, 6p |
| Abstrakt: |
Presents a comparative study of the Schottky barrier height variation on sulfide-treated gallium-arsenic surfaces with low work function metal contacts using current-voltage and capacitance-voltage measurements. Causes of variation in samarium and magnesium Schottky barrier heights; Importance of reaction specifics and stability of interface in the Schottky barrier height; Use of a semiconductor parameter analyzer. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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