| Autor: |
Bengtsson, Stefan, Andersson, Gert I., Andersson, Mats O., Engström, Olof |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1992, Vol. 72 Issue 1, p124, 17p, 2 Diagrams, 13 Charts, 2 Graphs |
| Abstrakt: |
Investigates the electrical and optical properties of wafer bonded unipolar silicon-silicon junctions. Capacitance of the bonded structures; Effect of the photogenerated increase in the minority carrier concentration in the interfacial region; Reason for the increased concentration of deep electron traps in the vicinity of the bonded interface. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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