Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centers.

Autor: Ahrenkiel, R. K., Keyes, B. M., Dunlavy, D. J.
Předmět:
Zdroj: Journal of Applied Physics; 7/1/1991, Vol. 70 Issue 1, p225, 7p, 2 Diagrams, 1 Chart, 5 Graphs
Abstrakt: Presents a study that measured the minority-carrier lifetime in III-IV heterostructures using time-resolved photoluminescence. Methodology; Analysis of the recombination kinetics of the monoruty carrier; Examination of the saturation of the recombination centers and the interface recombination of the minority carrier in the heterostructures.
Databáze: Complementary Index