| Autor: |
Warren, William L., Rong, F. Christopher, Poindexter, Edward H., Gerardi, Gary J., Kanicki, Jerzy |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1991, Vol. 70 Issue 1, p346, 9p, 6 Diagrams, 1 Graph |
| Abstrakt: |
Presents a study that investigated the chemical structure of silicon and nitrogen paramagnetic defect centers in amorphous silicon nitride thin films using X-band and Q-band electron spin resonance microwave excitation frequencies. Methodology; Analysis of the silicon dangling bond; Evaluation of the nitrogen dangling bond. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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