p-type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping.
| Autor: | Ohkawa, K., Mitsuyu, T. |
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| Zdroj: | Journal of Applied Physics; 7/1/1991, Vol. 70 Issue 1, p439, 4p, 3 Graphs |
| Abstrakt: | Presents a study that examined the characteristics of p-type zinc sellenide (ZnSe) homoepitaxial layers grown by molecular-beam epitaxy with nitrogen radical doping. Details of the growth procedure; Analysis of the Hall measurements of nitrogen-doped ZnSe homoepitaxy; Evaluation of the low-temperature photoluminescence spectra of ZnSe homoepitaxy. |
| Databáze: | Complementary Index |
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