Revealing of defects in InP by shallow (submicron) photoetching.
| Autor: | Weyher, J. L., Giling, L. J. |
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| Zdroj: | Journal of Applied Physics; 7/1/1985, Vol. 58 Issue 1, p219, 4p, 4 Black and White Photographs, 1 Graph |
| Abstrakt: | Presents a study that investigated the defects in indium phosphide (InP) samples photoetched in several solutions. Determination of the etch rates of InP; Comparison of the etched rates of InP and gallium arsenide; Analysis of the etch patterns on InP after shallow photoetching. |
| Databáze: | Complementary Index |
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