| Autor: |
Orr Arienzo, W. A., Glang, R., Lever, R. F., Lewis, R. K., Morehead, F. F |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1988, Vol. 63 Issue 1, p116, 5p |
| Abstrakt: |
Compares boron diffusion from a gaseous source to that from polycrystalline silicon sources. Use of secondary ion mass spectroscopy to determine the diffusion profiles; Application of Boltzmann-Matano analysis; Boron depth profiles of the samples with ion implanted polycrystalline silicon and capsule sources. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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