| Autor: |
Ralston, J., Wicks, G. W., Eastman, L. F., De Cooman, B. C., Carter, C. B. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1986, Vol. 59 Issue 1, p120, 4p, 2 Charts, 4 Graphs |
| Abstrakt: |
Presents a study which examined the defect structure and intermixing of annealed ion-implanted aluminum[sub0.3]gallium[sub0.3] arsenide/gallium arsenide superlattices. Use of cross-sectional transmission electron microsopy and Raman spectroscopy in the analysis; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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