| Autor: |
Hshieh, F. I., Borrego, J. M., Ghandhi, S. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/1986, Vol. 59 Issue 1, p1, 4p, 1 Chart, 3 Graphs |
| Abstrakt: |
Presents a study which evaluated the effect of processing conditions on the interface state density from capacitance-voltage measurements on metal oxide semiconductor capacitors, particularly on gallium arsenide field effect transistors. Examination of the optimum annealing condition; Experiment; Results and discussion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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