A study of strain in thin epitaxial films of yttrium silicide on Si(111).

Autor: Siegal, Michelle F., Martínez-Miranda, L. J., Santiago-Avilés, J. J., Graham, W. R., Siegal, M. P.
Předmět:
Zdroj: Journal of Applied Physics; 2/1/1994, Vol. 75 Issue 3, p1517, 4p, 1 Chart, 5 Graphs
Abstrakt: Presents a study that discussed the results of an x-ray diffraction analysis of epitaxial yttrium silicide films grown on silicon(111). Details of the experiment; Results; Discussion.
Databáze: Complementary Index