Analysis of GaAs Schottky/tunnel metal–insulator–semiconductor diode characteristics based on an interfacial layer model.

Autor:	Ikoma, Hideaki, Ishida, Toshiki, Sato, Kenji, Ishikawa, Toshifumi, Maeda, Keiji
Předmět:	GALLIUM ARSENIC SCHOTTKY barrier diodes METAL insulator semiconductors SEMICONDUCTOR diodes
Zdroj:	Journal of Applied Physics; 2/1/1993, Vol. 73 Issue 3, p1272, 7p, 2 Diagrams, 6 Graphs
Abstrakt:	Presents information on a study which investigated the current-voltage characteristics of gallium arsenic Schottky and tunnel metal-insulator-semiconductor diodes. Experimental procedures; Discussion; Conclusion.
Databáze:	Complementary Index
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