| Autor: |
Moalem, M., Balooch, M., Hamza, A. V., Siekhaus, W. J., Olander, D. R. |
| Předmět: |
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| Zdroj: |
Journal of Chemical Physics; 9/15/1993, Vol. 99 Issue 6, p4855, 5p |
| Abstrakt: |
The interaction of a collisionless beam of thermal C60 nanoclusters with a silicon dioxide surface has been investigated with modulated molecular beam-mass spectroscopic techniques. Analysis of the amplitude and phase lag of the desorbed C60 shows the interaction mechanism to involve the elementary steps of sticking, desorption, and long-range surface diffusion. Surface diffusion coefficients determined in this measurement indicate that surface C60 nanoclusters approach two-dimensional gas-like behavior. The sticking probability of C60 clusters on SiO2 is determined to be unity. The best fit desorption rate constant kd for C60 from SiO2 is 5×1010 exp(-23 kcal/mol/RT) in agreement with previous temperature programmed desorption experiments. The efficiencies of electron impact ionization of C60 to C60+ and C60++ is measured for electron energies from 10 to 105 eV for neutrals at 875 K. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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