| Autor: |
Lulli, G., Merli, P. G., Rizzoli, R., Berti, M., Drigo, A. V. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1989, Vol. 66 Issue 7, p2940, 7p, 3 Black and White Photographs, 9 Graphs |
| Abstrakt: |
Reports on the anomalous distribution of arsenic during implantation in silicon under self-annealing conditions. Techniques used in the analysis of the dopant profiles; Fundamentals of self-annealing implantation (SAI) in silicon; Description of the apparatus used for SAI. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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