| Autor: |
Kasu, Makoto, Fujita, Shizuo, Sasaki, Akio |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/1/1989, Vol. 66 Issue 7, p3042, 5p, 2 Diagrams, 1 Chart, 6 Graphs |
| Abstrakt: |
Reports on the observation and characterization of deep donor centers (DX centers) in silicon-doped aluminum arsenide. Carrier concentration in the DX centers revealed by deep level transient spectroscopy; Properties of the DX center in silicon-doped aluminum arsenide; Band diagram of sample under the emission bias and the injection bias. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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