Anomalous mobility and photo-Hall effect in ZnSe-GaAs heterostructures.

Autor: van Houten, H., Colak, S., Marshall, T., Cammack, D. A.
Předmět:
Zdroj: Journal of Applied Physics; 10/1/1989, Vol. 66 Issue 7, p3047, 9p, 1 Diagram, 1 Chart, 6 Graphs
Abstrakt: Examines the Hall and photo-Hall effect in zinc selenide epilayers grown by molecular beam epitaxy on semi-insulating gallium arsenide substrates. Peak mobility in the n-zinc selenide layer; Defects in the bulk of zinc selenide epilayer; Transport properties of zinc selenide epilayers.
Databáze: Complementary Index