Autor: |
van Houten, H., Colak, S., Marshall, T., Cammack, D. A. |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 10/1/1989, Vol. 66 Issue 7, p3047, 9p, 1 Diagram, 1 Chart, 6 Graphs |
Abstrakt: |
Examines the Hall and photo-Hall effect in zinc selenide epilayers grown by molecular beam epitaxy on semi-insulating gallium arsenide substrates. Peak mobility in the n-zinc selenide layer; Defects in the bulk of zinc selenide epilayer; Transport properties of zinc selenide epilayers. |
Databáze: |
Complementary Index |
Externí odkaz: |
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