Evaluation of silicon films as a diffusion mask and encapsulant for InP and GaAs.

Autor: Chin, A. K., Camlibel, I., Marchut, L., Singh, S., Van Uitert, L. G., Zydzik, G. J.
Předmět:
Zdroj: Journal of Applied Physics; 11/1/1985, Vol. 58 Issue 9, p3630, 4p
Abstrakt: Presents information on a study that determined that silicon films have nearly ideal properties for use as a diffusion mask and encapsulation coating for InP and GaAs. Research methodology; Results and discussion.
Databáze: Complementary Index