Planar 1.3 and 1.55 μm InGaAs(P)/InP electroabsorption waveguide modulators using oxygen ion mixing and the photoelastic effect.

Autor: Pappert, S. A., Xia, W., Jiang, X. S., Guan, Z. F., Zhu, B., Liu, Q. Z., Yu, L. S., Clawson, A. R., Yu, P. K. L., Lau, S. S.
Předmět:
Zdroj: Journal of Applied Physics; 5/1/1994, Vol. 75 Issue 9, p4352, 10p
Abstrakt: Focuses on a study which described the use of elevated temperature implantation to simultaneously achieve compositional disordering and electrical isolation and form guided-wave modulators using oxygen ion beam mixing. Insight on indium phosphide (InP)-based ion-beam mixing devices; Description of results on elevated temperature oxygen ion beam mixing in InP-based superlattices; Discussion on the photoelastic effect in InP-based structures.
Databáze: Complementary Index