Ga adatom incorporation kinetics at steps on vicinal GaAs (001) surfaces during growth of GaAs by molecular beam epitaxy.
| Autor: | Shitara, T., Zhang, J., Neave, J. H., Joyce, B. A. |
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| Zdroj: | Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4299, 6p, 8 Graphs |
| Abstrakt: | Deals with a study which examined the transition from a two-dimensional nucleation to step-flow growth on variously misoriented vicinal gallium arsenide surfaces. Experimental details; Discussion on the diffraction conditions; Results. |
| Databáze: | Complementary Index |
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