Velocity modulation in GaAs/AlxGa1-xAs impact avalanche transit-time diodes.

Autor: Kearney, M. J., Couch, N. R., Smith, R. S., Stephens, J. S.
Předmět:
Zdroj: Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4612, 3p, 1 Chart, 3 Graphs
Abstrakt: Presents a study which investigated the efficiency of conventional gallium arsenide impact avalanche transit-time devices. Use of the Monte Carlo simulation; Characteristic of the equilibrium velocity-field; Velocity modulation in gallium arsenide and aluminum gallium arsenide structures.
Databáze: Complementary Index