Atomic configurations and local order in laser-synthesized Si, Si-N, Si-C, and Si-C-N nanometric powders, as studied by x-ray-induced photoelectron spectroscopy and extended x-ray-absorption fine-structure analysis.

Autor:	Gheorghiu, A., Sénémaud, C., Roulet, H., Dufour, G., Moreno, T., Bodeur, S., Reynaud, C., Cauchetier, M., Luce, M.
Předmět:	CHEMICAL bonds SILICON CARBON GAUSSIAN processes
Zdroj:	Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4118, 10p, 10 Charts, 9 Graphs
Abstrakt:	Presents a study which investigated the chemical bonding and local in silicon, silicon-nitrogen (N), silicon-Carbon (C), and silicon-C-N nanometric powders. Chemical bonding around atomic sites; Decomposition of the spectra into Gaussian curves; Analysis on the origin of kinetic energy.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu