Autor: |
Olego, D. J., Tamura, M., Okuno, Y., Kawano, T., Hashimoto, A. |
Předmět: |
|
Zdroj: |
Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4329, 4p, 1 Black and White Photograph, 2 Graphs |
Abstrakt: |
Presents a study which investigated the structural and optoelectronic properties of the heteroepitaxial indium phosphide layers. Development of gallium arsenide (GaAs) on silicon heteroepitaxial technology; Description of sample growth and structure; Properties of the dislocations in GaAs. |
Databáze: |
Complementary Index |
Externí odkaz: |
|