Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy.

Autor: Olego, D. J., Tamura, M., Okuno, Y., Kawano, T., Hashimoto, A.
Předmět:
Zdroj: Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4329, 4p, 1 Black and White Photograph, 2 Graphs
Abstrakt: Presents a study which investigated the structural and optoelectronic properties of the heteroepitaxial indium phosphide layers. Development of gallium arsenide (GaAs) on silicon heteroepitaxial technology; Description of sample growth and structure; Properties of the dislocations in GaAs.
Databáze: Complementary Index