| Autor: |
Iimura, Y., Shiraishi, T., Takasugi, H., Kawabe, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1987, Vol. 61 Issue 5, p2095, 3p |
| Abstrakt: |
Presents information on a study which analyzed the origin of the formation of a highly resistive layer around a growth-interrupted interface in gallium arsenide. Problems in the fabrication of electronic devices by molecular beam epitaxy; Measurement of the capacitance-voltage carrier profile; Clarification of the existence of deep-trap levels at the growth-interrupted interface. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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