Si-implanted n+-InP/p-InP junctions: Electrical characterization and noise.
| Autor: | Conjeaud, A. L., Orsal, B., Dhouib, A., Alabedra, R., Gouskov, L. |
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| Zdroj: | Journal of Applied Physics; 3/1/1986, Vol. 59 Issue 5, p1707, 7p |
| Abstrakt: | Discusses the electrical properties and noise of mesa indium phosphide (InP) diodes obtained by silicon implantation into p-InP substrate. Behavior of reverse I-V characteristics and noise in the different polarization ranges; Variation of the white noise. |
| Databáze: | Complementary Index |
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