| Autor: |
Taniwaki, Masafumi, Yoshiie, Toshimasa, Koide, Hideto, Ichihashi, Motomi, Yoshimoto, Naoto, Yoshida, Hiroyuki, Hayashi, Yoshihiko |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1989, Vol. 66 Issue 1, p161, 4p, 5 Black and White Photographs |
| Abstrakt: |
Investigates the structural changes by implantation and annealing as a function of the depth by cross-sectional views of transmission electron microscopy. Factors that were observed showing the existence of the polycrystalline and amorphous structure in the area diffraction pattern; Diffraction pattern of the implanted gallium arsenide with an iron ion of 4 x 10[sup14]cm&[sup-2]; Difference of the iron ion-implanted gallium arsenide from other ions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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