| Autor: |
Lee, B.-T., Gronsky, R., Bourret, E. D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/1/1988, Vol. 64 Issue 1, p114, 5p |
| Abstrakt: |
Presents a study that investigated the formation of dislocation loops from an excess arsenic concentration using transmission electron microscopy. Description of a model that identified types of point defects involved in the formation; Characterization of precipitates; Discussion on possible processes of arsenic-antisite defect formation by point-defect interaction. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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