Scanning tunneling microscopy assisted oxide surface etching.

Autor: Saulys, D., Rudd, G., Garfunkel, E.
Předmět:
Zdroj: Journal of Applied Physics; 2/1/1991, Vol. 69 Issue 3, p1707, 5p, 4 Black and White Photographs, 1 Diagram
Abstrakt: Presents a study that explained the defect creation and scanning tunneling electron microscopy-assisted surface etching process in a conducting oxide. Methodology; Features of the defects in the conducting oxide; Analysis of mechanism of structural changes in the surface pit shape of the conducting oxide.
Databáze: Complementary Index