Capture barrier and the ionization entropy of the DX center in Se-doped AlxGa1-xAs.
| Autor: | Hanak, Thomas R., Ahrenkiel, Richard K., Timmons, Michael L. |
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| Zdroj: | Journal of Applied Physics; 2/1/1991, Vol. 69 Issue 3, p1425, 4p, 2 Charts, 3 Graphs |
| Abstrakt: | Investigates the capture barrier and ionization entropies for the DX center in selenium-doped Al[subx]Ga[sub1-x]As. Theory of the study; Experimental results; Conclusion. |
| Databáze: | Complementary Index |
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