| Autor: |
Vettese, F., Sicart, J., Robert, J. L., Cristoloveanu, S., Bruel, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1989, Vol. 65 Issue 3, p1208, 5p, 1 Chart, 7 Graphs |
| Abstrakt: |
Discusses a study that focused on conductivity and Hall measurements which have been carried out on thin silicon films formed by oxygen implantation and high-temperature annealing. Effect of the oxygen content in bulk silicon on thermal donors; Implication of a significant change for donor densities and ionization energies; Result of the high dose of implanted oxygen ions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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